Surface chemical and electronic properties of plasma-treated n-type Al0.5Ga0.5N
نویسندگان
چکیده
The effects of plasma treatment on the surface properties of Si-doped Al 0.5 Ga 0.5 N were studied by X-ray photoelectron spectroscopy and metal contact measurements. Plasma treatment resulted in a N-deficient nonstoichiometric AlGaN surface with an increased O concentration and large red shifts of photoelectron peaks. The red shifts remained after removal of the surface oxide, indicating a downward shift of the surface Fermi level as a result of ion-induced compensating defects. Pre-metal plasma treatment led to more rectifying electrical characteristics of Ti/Al/Ti/Au contacts. Current–voltage characterization at elevated temperatures revealed strong compensating effects of the plasma damage in Al 0.5 Ga 0.5 N even at 300 °C.
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